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| Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 6N170 IXBT 6N170 VCES = 1700 V = 12 A IC25 VCE(sat) = 3.6 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 33 Clamped inductive load TC = 25C Maximum Ratings 1700 1700 20 30 12 6 24 ICM = 16 V CES = 1350 75 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A V W C C C C C TO-268 (IXBT) G E (TAB) TO-247 AD (IXBH) G C (TAB) C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low conduction losses High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification Applications AC motor speed control Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Capacitor discharge circuits Advantages High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 1.13/10Nm/lb.in. 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1700 3.0 TJ = 25C TJ = 125C 6 10 100 100 TJ = 125C 3.0 3.3 3.6 V V A A nA V V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 A, VGE = 0 V = 250 A, VCE = VGE VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V (c) 2003 IXYS All rights reserved DS99004(02/03) IXBH 6N170 IXBT 6N170 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3 4 330 VCE = 25 V, VGE = 0 V, f = 1 MHz 23 6 20 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 3.6 8 25 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 120 18 600 1110 4 25 Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 120 20 0.7 660 1600 5 1000 1600 S P TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % pF pF pF nC nC nC ns ns ns ns Dim. e 6 mJ ns ns mJ ns ns mJ 1.65 K/W Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline (TO-247) 0.25 K/W Reverse Diode Symbol VF IRM t rr Test Conditions IF t IF vR Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3.0 6 360 V A ns = IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% = 6 A, VGE = 0 V, -diF/dt = 50 A/us = 100A Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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